کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1788631 | 1023475 | 2010 | 4 صفحه PDF | دانلود رایگان |
In this paper, we studied the PL property and the surface morphology of porous silicon prepared from N-type single silicon wafers coated with and without Al film. By introducing the Al film on the surface of silicon wafer before etching, the morphology of porous silicon exhibits obvious discrimination compared with that of the conventional porous silicon, which can be explained by the formation mechanism of the samples, and the emission property of two-type porous silicon also showed the clear difference, which may be attributed to the discrepancy in the structural configuration of the samples. Furthermore, it was found that the blue emission decreased and the green emission was almost completely quenched after boron-particle deposition, which is attributed to the structural change or annihilation of the emission defects during annealing process.
Journal: Current Applied Physics - Volume 10, Issue 3, May 2010, Pages 930–933