کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1788726 | 1023478 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The enhancement of nanocrystallization in amorphous silicon thin films deposited on glass substrate
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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چکیده انگلیسی
We have improved nanocrystallization in amorphous silicon thin films deposited on glass. Among the most effective deposition conditions are hydrogenation and the rf-power which provide the optimal condition (i.e., the mixing ratio of reactive gases is Ar:H2 = 1:25 and power density is 6.5 W/cm2), where no longer appears amorphous network but nanocrystals fall to the size of 5 nm as examined by Scherrer formula and the first-order optical phonon spectrum. We also investigated to learn profiles of nanocrystals measured by cross-sectional transmission electron microscopy as well as Raman scattering and X-ray diffraction, and they proved that nanocrystallization evolves out of amorphous network as the amorphous silicon increases its layer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 6, Supplement 1, August 2006, Pages e54–e57
Journal: Current Applied Physics - Volume 6, Supplement 1, August 2006, Pages e54–e57
نویسندگان
Jaimin Lee, Minsoo Shon, Jong H. Lyou,