کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1788812 1023479 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
rf-Magnetron sputtered ITO thin films for improved heterojunction solar cell applications
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
rf-Magnetron sputtered ITO thin films for improved heterojunction solar cell applications
چکیده انگلیسی

Indium tin oxide (ITO) films of low resistivity, high transmittance and good figure of merit were prepared by radio frequency magnetron sputtering, at different substrate temperatures (Ts) under such a high λ/d value and used as anti-reflection layer in heterojunction solar cells. For film deposition in the Ts range 150 °C < Ts ⩽ 250 °C, XRD shows that coexistence of the 〈1 0 0〉 and 〈1 1 1〉 textures. The resistivity and Hall mobility of ITO films were improved due to thermally induced crystallization. However, carrier concentration of these ITO films is sensitive to the Ts. We attributed these effects to the Ar+ ions bombardment and differing adatom mobility of the heated atoms on the substrate under such a high λ/d value. Those ITO films were used to fabricate single-side heterojunction solar cells. As the Ts is increased, the device performance improves and the best photo voltage parameters of the device were found to be Voc = 640 mV, Jsc = 36.90 mA/cm2, FF = 0.71, η = 16.3% for Ts = 200 °C. The decrease in performance beyond the Ts of 200 °C is attributed to hydrogen effusion to the defect in emitter layer. We noted that the figure of merit value of ITO films was reflected in the performance of devices.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 10, Issue 3, Supplement, May 2010, Pages S506–S509
نویسندگان
, , , , , , , , ,