کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1788815 | 1023479 | 2010 | 5 صفحه PDF | دانلود رایگان |
This paper studies the effect of the annealing process on the performance of P3HT/PCBM photovoltaic devices, in terms of their efficiencies. The basic photovoltaic devices are annealed on a hot-plate, at a temperature of 150 °C for 10 min in air. For comparison, the thermal annealing of photovoltaic devices is carried out using rapid thermal annealing (RTA) equipment, at a temperature of 150 °C for 10 min in different environments such as in vacuum, in nitrogen and in argon, individually. The light conversion efficiency (Eff) of the resulting photovoltaic devices increases from 2.29% (hot-plate annealing) to 2.77% after annealing in a vacuum environment. As a result, the organic photovoltaic devices, annealed in a vacuum show enhanced efficiencies compared with those annealed in different gas environments.
Journal: Current Applied Physics - Volume 10, Issue 3, Supplement, May 2010, Pages S520–S524