کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1788951 | 1023484 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Hole mobility and device characteristics of SiGe dual channel structure
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Hole mobility and current–voltage characteristics of p-type MOS transistors with dual channel are examined. High hole mobility needs high Ge compositions in channels (higher than 60% Ge). Besides, hole mobility in alloy channels does not seem much degraded by alloy scattering. Even though high hole mobility could be easily obtained for dual channels with higher than 60% Ge, junction leakage and subthreshold characteristics are severely worsened. These results indicate that there should be a tradeoff between mobility enhancement and the threshold characteristics of p-type MOS transistors for adopting the SiGe dual channel with high Ge composition.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 9, Issue 1, Supplement, January 2009, Pages S47–S50
Journal: Current Applied Physics - Volume 9, Issue 1, Supplement, January 2009, Pages S47–S50
نویسندگان
Jongwan Jung,