Thermally stimulated current measurements in as-grown TlGaSeS layered single crystals

Charge carrier traps in as-grown TlGaSeS layered single crystals were studied using thermally stimulated current measurements. The investigations were performed in temperatures ranging from 10 to 100 K. The experimental evidences were found for the presence of one shallow hole trapping center in TlGaSeS, located at 12 meV from the valence band. The trap parameters have been calculated using various methods of analysis, and these agree well with each other. Its capture cross-section and concentration have been found to be 8.9 × 10−26 cm2 and 2.0 × 1014 cm−3, respectively. Analysis of the thermally stimulated current data at different light excitation temperatures leads to a value of 19 meV/decade for the shallow hole traps distribution.