کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1789070 1023490 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Chalcogen-based thin film transistor using CuInSe2 photo-active layer
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Chalcogen-based thin film transistor using CuInSe2 photo-active layer
چکیده انگلیسی

We propose chalcogen-based photo-thin film transistor (P-TFT) using CuInSe2 (CIS) homo-junction. By using a tri-layer process, we fabricated n- and p-type CIS films. Optical and electrical properties of the fabricated CIS films are measured to be suitable for homo-junction. For the fabrication of a P-TFT, n-type CIS generating higher photo current was used for a channel layer whereas p-type CIS with higher carrier density was used for source and drain. The fabricated transistor exhibited typical transistor operation of p-channel enhancement mode and current increase with light.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 9, Issue 6, November 2009, Pages 1326–1329
نویسندگان
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