کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1789079 | 1023490 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhancing properties of organic light-emitting diodes with LiF inside the hole transport layer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
A new device has been made by inserting thin LiF layer in N,N′-diphenyl-N,N′-bis(1-napthyl–phenyl)-1, 1′-biphenyl-4,4′-diamine (NPB), which has a configuration of ITO/NPB(20 nm)/LiF(0.5 nm)/NPB(20 nm)/Alq3(60 nm)/LiF(0.5 nm)/Al. Compared with normal device, the device inserted LiF layer inside NPB (HTL) can improve its performance. The luminance and efficiency is about 1.4 and 1.3 folds high of the conventional structure, respectively. The suggestion mechanism is that the LiF in the NPB layer can block holes of NPB, and balance the holes and electrons. Consequently, there are more excitons formed to boost the diode’s luminance and efficiency. And it may offer some valuable references for OLED’s structure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 9, Issue 6, November 2009, Pages 1365–1368
Journal: Current Applied Physics - Volume 9, Issue 6, November 2009, Pages 1365–1368
نویسندگان
Enyu Zhou, Zhenbo Deng, Zhaoyue Lv, Zheng Chen, Denghui Xu, Yongsheng Wang,