Effect of temperature and injection current on characteristics of TO-CAN packaged Fabry–Perot laser diode

We fabricated and investigated the thermal characteristics of TO-CAN (transistor-outline-can) packaged long wavelength GaInAsP/InP Fabry–Perot laser diode. Characteristic temperature of 55 K and peak wavelength shift of 0.4 nm/°C depending on the temperatures were obtained. Furthermore, overheating of semiconductor laser originated from thermal resistance is analyzed and evaluated by measuring junction temperature. Results from experiment and estimation are compared at extreme operating conditions in which show agreement within 1 °C.