Properties of thin manganite films grown on semiconducting substrates for spintronics applications

La0.7Sr0.3MnO3 (LSMO) manganite thin films were grown by pulsed plasma deposition on silicon (Si) and gallium arsenide (GaAs) substrates covered by an amorphous oxide. Manganite films are characterized by polycrystalline structure. Ferromagnetic transition is above room temperature and for 50 nm thick film the Curie temperature was as high as 325 K and 305 K for LSMO/SiOx/Si and LSMO/AlOx/GaAs, respectively.