A new method of diode ideality factor extraction from dark I–V curve

Most of the techniques have been developed to extract diode ideality factor utilize the one-exponential diode model. However, for a correct description of two linear regions in the log I–V (current–voltage) graph of unipolar devices, one-exponential diode model is not sufficient. We have derived a new model which is named Beta (β) model for the calculation of diode ideality factor from dark current–voltage characteristic of the device (p–i–n device). Results obtained from our model are considerably in compliance with the experimental data.