کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1798555 1524825 2015 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effects of single O vacancy on the magnetism and electronic structure of Ti doped CoO: A first principle study
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Effects of single O vacancy on the magnetism and electronic structure of Ti doped CoO: A first principle study
چکیده انگلیسی


• When the O vacancies at 6 position and 9, the systems are magnetic insulator.
• The system with O vacancy at position 5 shows the metallic characteristic.
• The system with O vacancy at position 2, 13 or 14 shows a half-metallic character.

The electronic structure and magnetism of Co14Ti2O15 systems are investigated by first-principles calculations. CoO is an antiferromagnetic insulator. The Ti doped CoO at positions 9 and 11 shows a half-metallic character. The O vacancy near Ti has a great effect on Ti magnetic moment due to the electron transfer. When the O vacancy at position 6 or 9, the Ti magnetic moment is very small and the systems are magnetic insulator. As the O vacancy locates at position 1, the Ti magnetic moment is smaller than that in Co14Ti2O16 system, showing a metallic character that makes its conductivity enhanced. The system with O vacancy at position 2 shows a half-metallic character due to the strong hybridization between Ti and Co atoms. The system with O vacancy at position 5 shows a metallic character; the system with O vacancy at position 13 or 14 shows a half-metallic character.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 396, 15 December 2015, Pages 91–96
نویسندگان
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