Three-dimensional simulations in optimal performance trial between two types of Hall sensors fabrication technologies

• A comparison between Hall devices integrated in regular bulk and SOI CMOS technologies is made.
• A three-dimensional model for the XL Hall structure, in the two technologies, is provided.
• The main characteristic parameters and the temperature drift are investigated.
• The sensors performance is evaluated using 3D physical simulations and measurements data.

The main objective of the present work is to make a comparison between Hall devices integrated in regular bulk and Silicon-on-Insulator (SOI) CMOS technology. A three-dimensional model based on numerical estimation is provided for a particular XL Hall structure in two different technologies (the first one is XFAB XH 0.35 µm regular bulk CMOS and the second one is XFAB SOI XI10 1 µm non-fully depleted). In assessing the performance of the Hall Effect sensors included in the comparison, both three-dimensional physical simulations and measurements results will be used. In order to discriminate which category of sensors has the highest performance, their main characteristic parameters, including input resistance, Hall voltage, absolute sensitivity and their temperature drift, will be extracted and compared. Electrostatic potential and current density distribution are important aspects that are also investigated. The particular technology offering the highest sensor performance is identified.