کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1799036 1524833 2015 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
First principles study of a new half-metallic ferrimagnets Mn2-based full Heusler compounds: Mn2ZrSi and Mn2ZrGe
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
First principles study of a new half-metallic ferrimagnets Mn2-based full Heusler compounds: Mn2ZrSi and Mn2ZrGe
چکیده انگلیسی


• For Mn2ZrZ (Z=Si, Ge) the AlCu2Mn-type structure is more favorable than the CuHg2Ti-type.
• The calculated elastic constants confirm their mechanical stability.
• Their negative estimated formation energies means they can be synthesized.
• Their lattice constants match well with those of many semiconductor substrates.
• They are predicted to be true half-metallic ferrimagnets.
• The band gaps of Mn2ZrSi~0.51 eV and Mn2ZrGe~0.28 eV are indirect along, the Γ–X.

Half-metallic properties of new predicted Mn2-based full Heusler alloys Mn2ZrSi and Mn2ZrGe have been studied by first-principles full-potential linearized augmented plane wave plus local orbital (FP-LAPW+lo) method based on density functional theory (DFT). Our investigation is focused on the structural, elastic, electronic and magnetic properties of these compounds. The AlCu2Mn-type structure is found to be energetically more favorable than the CuHg2Ti-type structure for both compounds and are half-metallic ferrimagnets (HMFIs) with total magnetic moments of 2.000µB per formula unit, well consistent with Slater–Pauling rule (Mtot=(24–Ztot)µB). Calculations show that both the alloys have an indirect band gaps, in the majority-spin channel, with values of 0.505 eV and 0.278 eV for Mn2ZrSi and Mn2ZrGe, respectively. It was found that Mn2ZrSi and Mn2ZrGe preserved their half-metallicity for lattice constants range of 5.85–6.38 Å and 6.05–6.38 Å, respectively, and kept a 100% of spin polarization at the Fermi level. Moreover, the calculated formation energies and elastic constants confirm that these compounds are stable chemically and mechanically, and the good crystallographic compatibility with the lattice of semiconductors used industrially makes them promising magnetic materials in spintronic applications.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 388, 15 August 2015, Pages 59–67
نویسندگان
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