Anomalous Hall effect in perpendicularly magnetized Mn3−xGaMn3−xGa thin films

Mn3−xGaMn3−xGa (x=0.1, 0.4, 0.7) thin films on MgO and SrTiO3 substrates were investigated with magnetic anisotropy perpendicular to the film plane. An anomalous Hall effect was observed for the tetragonal distorted lattice in the crystallographic D022 phase. The Hall resistivity ϱxyϱxy was measured in a temperature range from 20 to 330 K. The determined skew scattering and side jump coefficients are discussed with regard to the film composition and used substrate and compared to the crystallographic and magnetic properties.

► Mn3−xGaMn3−xGa thin films were deposited by DC magnetron sputtering on MgO and SrTiO3 substrates.
► We found an optimal deposition temperature of 530 °C to induce the tetragonal distorted DO22 phase.
► The XRD studies reveal an improved growth of Mn3−xGaMn3−xGa deposited on SrTiO3 substrates.
► AHE measurements show a vanishing skew scattering contribution for the Mn2.9Ga thin films.
► The higher contribution for films on SrTiO3 might represent the higher crystal ordering.