کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1801414 | 1524897 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth induced anisotropy of cobalt in cobalt/organic semiconductor films
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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چکیده انگلیسی
We present the study of Co/organic semiconductor (OS) stacks both from the morphological and magnetic point of view. Co has been successfully used up to now as top contact of hybrid vertical devices. While the properties of Co grown on amorphous layers are well established, its deposition on soft materials presents critical aspects such as interfacial damage that affects its electrical and magnetic properties. In this work we focus on the influence of the morphology of the organic underlayer in the magnetic behavior of a Co thin film: tris(8-hydroxyquinoline) aluminum (Alq3) grown in different conditions by molecular beam evaporation have been considered. A further considered aspect is the effect of the presence of a thin oxide barrier (Al2O3) on the Co magnetic properties.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 322, Issues 9â12, MayâJune 2010, Pages 1251-1254
Journal: Journal of Magnetism and Magnetic Materials - Volume 322, Issues 9â12, MayâJune 2010, Pages 1251-1254
نویسندگان
Chiara Pernechele, Ilaria Bergenti, Massimo Solzi, Massimo Ghidini, Francesca Casoli, Valentin Dediu,