کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1802171 1024590 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Growth and thermal stability of epitaxial BiFeO3 thin films
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Growth and thermal stability of epitaxial BiFeO3 thin films
چکیده انگلیسی

We have investigated the oxygen pressure and the temperature dependence on BiFeO3 thin films deposited on SrTiO3 substrates by pulsed laser deposition. Reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM) and X-ray diffraction measurements indicate that high-quality epitaxial thin films are obtained for PO2=0.4mbar and T=650 °C. Outside of this pressure–temperature window, parasitic peaks attributed to β-Bi2O3 appear. We find an increase of the out-of-plane lattice parameter with oxygen pressure that we ascribe to Bi-deficiency due to its high volatility at low pressure. Ex-situ anneals have been performed and results show that as-grown single-phase BiFeO3 thin films degrade after annealing, whereas as-grown BiFeO3 containing impurity phases evolve toward a single-phase structure. These experiments demonstrate that parasitic phases can stabilize compounds which are usually unstable in air at elevated temperatures.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 321, Issue 11, June 2009, Pages 1702–1705
نویسندگان
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