کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1802545 | 1024599 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Crystallographic and magnetic properties of SrM thin films on Pt underlayer prepared at various substrate temperatures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Strontium ferrite (SrM) thin films deposited on thermally oxidized silicon wafer (SiO2/Si) and single crystal sapphire with (0 0 l) orientation (Al2O3(0 0 l)) substrate using Pt underlayer were prepared by DC magnetron sputtering system. It was found that the intensity of (1 1 1) line for Pt and that of (0 0 l) diffraction line for SrM increases with increasing substrate temperature, Tu. The c-axis dispersion angle, Îθ50, of SrM(0 0 8) depends on that of Pt underlayer. Both dispersion angle of Pt(1 1 1) and SrM(0 0 8) decrease with increasing temperature. It was observed that the saturation magnetization of SrM/Pt deposited on SiO2/Si is higher than that of Al2O3 substrate. The coercivity and remanent squareness ratio in perpendicular direction are higher than that in in-plane direction. The maximum of coercivity in perpendicular direction of SrM/Pt films deposited on single crystal Al2O3 is about 4.2 kOe.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 321, Issue 13, July 2009, Pages 1939-1942
Journal: Journal of Magnetism and Magnetic Materials - Volume 321, Issue 13, July 2009, Pages 1939-1942
نویسندگان
Arkom Kaewrawang, Ali Ghasemi, Xiaoxi Liu, Akimitsu Morisako,