کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1804711 | 1024653 | 2007 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of induced anisotropy on the bit stability and switching field in magnetic random access memory
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effects of induced anisotropy on the bit stability and switching field in magnetic random access memory Effects of induced anisotropy on the bit stability and switching field in magnetic random access memory](/preview/png/1804711.png)
چکیده انگلیسی
One of the features of the new spin-flop switching method with its wide writing window is to use a trilayer synthetic antiferromagnet (SyAF) with circular geometry as the free layer structure. For circular cells with zero in-plane shape anisotropy, the bi-stability of bits is achieved through the formation of induced anisotropy. Both the bi-stability and spin alignment become poor at a small induced anisotropy. On the other hand, a large induced anisotropy has an adverse effect of increasing the switching field. The switching field increase is more pronounced at higher antiferromagnetic exchange coupling of the trilayer SyAF. Our systematic investigations show that the suitable magnitude of induced anisotropy field is in the range 15-20Â Oe.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 309, Issue 2, February 2007, Pages 326-332
Journal: Journal of Magnetism and Magnetic Materials - Volume 309, Issue 2, February 2007, Pages 326-332
نویسندگان
K.S. Kim, K.H. Shin, S.H. Lim,