کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1804841 | 1024658 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Two opposite gradients of hole density in as-grown and annealed (Ga,Mn)As layers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The depth distribution of the hole density p in 500Â nm-thick (Ga,Mn)As layers is investigated. From Raman scattering spectra, it is found that the gradients of p are opposite in the as-grown and annealed layers. At the region around the free surface, with increasing etching depth, p significantly increases in the as-grown layer; however, p decreases distinctly in the annealed layer. Then, in the bulk, p becomes almost homogeneous for both cases. The etching-depth dependence of Curie temperature obtained from magnetic measurements is in agreement with the distribution characterization of p. These results suggest that annealing induces outdiffusion of Mn interstitials towards the free surface, and incomplete outdiffusion during the growth leads to an accumulation of Mn interstitials around the free surface of the as-grown (Ga,Mn)As.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 308, Issue 2, January 2007, Pages 313-317
Journal: Journal of Magnetism and Magnetic Materials - Volume 308, Issue 2, January 2007, Pages 313-317
نویسندگان
J.J. Deng, J.H. Zhao, P.H. Tan, J.F. Bi, H.D. Gan, Z.C. Niu, X.G. Wu,