دانلود مقالات ISI درباره 81.15Hi + ترجمه فارسی

Sb-mediated growth of high-density InAs quantum dots and GaAsSb embedding growth by MBE

Keywords: 81.15Hi; 68.65Hb; 78.55Cr; Quantum dots; InAs; Sb; Molecular beam epitaxy; Photoluminescence; High-density;

دانلود رایگان متن کامل مقاله ISI 4 صفحه سال انتشار : 2008 سفارش ترجمه

High mobility metamorphic AlSb/InAs heterostructures grown on InP substrates

Keywords: 81.15Hi; 81.05.Ea; 78.55.-m; 85.30.TvA3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III–V materials; B3. High electron mobility transistors

دانلود رایگان متن کامل مقاله ISI 5 صفحه سال انتشار : 2007 سفارش ترجمه

Two opposite gradients of hole density in as-grown and annealed (Ga,Mn)As layers

Keywords: 75.50.Pp; 81.40.Rs; 78.30.Fs; 81.15Hi; Magnetic semiconductors; Electrical and magnetic properties (related to treatment conditions); Raman spectra; Molecular-beam epitaxy;

دانلود رایگان متن کامل مقاله ISI 5 صفحه سال انتشار : 2007 سفارش ترجمه

Influences of As flux on the lattice constants, magnetic and transport properties of (Ga, Mn)As epilayers

Keywords: 75.50.Pp; 81.15Hi; 81.40.RsA. Magnetic semiconductors; B. Molecular-beam epitaxy; C. Electrical and magnetic properties (related to treatment conditions)

دانلود رایگان متن کامل مقاله ISI 6 صفحه سال انتشار : 2007 سفارش ترجمه

Temperature-dependent carbon incorporation into the Si1−yCy film during gas-source molecular beam epitaxy using monomethylsilane

Keywords: 68.43Vx; 81.15Hi; SiC; Monomethylsilane; TPD; MIR-FT-IR; Surface hydrogen; Carbon incorporation;

دانلود رایگان متن کامل مقاله ISI 5 صفحه سال انتشار : 2006 سفارش ترجمه

Ballistic transport in InSb mesoscopic structures

Keywords: 68.65.La; 68.65.Fg; 73.23.Ad; 73.63.Hs; 73.63.Nm; 81.15Hi; 85.35.Be; InSb; Ballistic transport; Bend resistance; Quantum point contact; Mesoscopic structures;

دانلود رایگان متن کامل مقاله ISI 5 صفحه سال انتشار : 2005 سفارش ترجمه

InN layers grown on silicon substrates: effect of substrate temperature and buffer layers

Keywords: 78.55.Cr; 81.15Hi; A1. Crystal morphology; A1. X-ray diffraction; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;

دانلود رایگان متن کامل مقاله ISI 5 صفحه سال انتشار : 2005 سفارش ترجمه

Temperature dependence of the growth morphology in molecular beam epitaxy grown MnAs

Keywords: 75.70Ak; 81.15Hi; A1. Growth temperature effect; A1. Transmission electron microscopy; A3. Molecular beam epitaxy; B1. MnAs;

دانلود رایگان متن کامل مقاله ISI 7 صفحه سال انتشار : 2005 سفارش ترجمه