کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9830320 | 1524507 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Temperature dependence of the growth morphology in molecular beam epitaxy grown MnAs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The necessity for employing a low substrate temperature for MnAs growth in molecular beam epitaxy has been clarified through an investigation for the effect of the growth temperature on the microscopic structural morphology. The atomic registry of MnAs films on GaAs substrate was examined by transmission electron microscopy. The MnAs films revealed a single-crystalline nature at â¼300 °C, but the morphology changed to polycrystalline with an increase in the substrate temperature. The variation in the degree of the magnetic anisotropy of the films was consistent with the change of the film morphology along with the substrate temperature. The uniaxial in-plane magnetic anisotropy of the epitaxial MnAs film was correlated with the surface reconstruction on the GaAs substrate.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 273, Issues 3â4, 3 January 2005, Pages 396-402
Journal: Journal of Crystal Growth - Volume 273, Issues 3â4, 3 January 2005, Pages 396-402
نویسندگان
J.B. Park, K.H. Kim, K.J. Lee, D.J. Kim, H.J. Kim, Y.E. Ihm,