کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1805185 | 1024671 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electronic transport properties and Microstructures of TiO2:Co magnetic semiconductors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electronic transport properties and Microstructures of TiO2:Co magnetic semiconductors Electronic transport properties and Microstructures of TiO2:Co magnetic semiconductors](/preview/png/1805185.png)
چکیده انگلیسی
TiO2:Co thin films of high Co concentration were investigated by the high resolution transmission electron microscopy, physical property measurement system and energy dispersive X-ray. The as-deposited films are amorphous magnetic semiconductors and we did not find any Co metal particles in them. The electronic transport process in the low-temperature range below 80 K could be described by the spin-dependent variable-range-hopping process. However, after the samples were annealed at 300 °C, large amounts of Co metal particles were observed to connect each other and the films show a metallic behavior. The origin of ferromagnetism of the thin films is also discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 312, Issue 1, May 2007, Pages 53–57
Journal: Journal of Magnetism and Magnetic Materials - Volume 312, Issue 1, May 2007, Pages 53–57
نویسندگان
Hong-Qiang Song, Yong Wang, Shi-Shen Yan, Liang-Mo Mei, Ze Zhang,