Evaluation of the dark signal performance of different SiPM-technologies under irradiation with cold neutrons

In this paper we report the results of the assessment of changes in the dark signal delivered by three silicon photomultiplier (SiPM) detector arrays, fabricated by three different manufacturers, when irradiated with cold neutrons (wavelength λn=5 Å or neutron energy of En=3.27 meV) up to a neutron dose of 6×1012 n/cm2. The dark signals as well as the breakdown voltages (Vbr) of the SiPM detectors were monitored during the irradiation. The system was characterized at room temperature. The analog SiPM detectors, with and without a 1 mm thick Cerium doped 6Li-glass scintillator material located in front of them, were operated using a bias voltage recommended by the respective manufacturer for a proper detector performance. Iout-Vbias measurements, used to determine the breakdown voltage of the devices, were repeated every 30 s during the first hour and every 300 s during the rest of the irradiation time. The digital SiPM detectors were held at the advised bias voltage between the respective breakdown voltage and dark count mappings repeated every 4 min. The measurements were performed on the KWS-1 instrument of the Heinz Maier-Leibnitz Zentrum (MLZ) in Garching, Germany. The two analog and one digital SiPM detector modules under investigation were respectively fabricated by SensL (Ireland), Hamamatsu Photonics (Japan), and Philips Digital Photon Counting (Germany).