Growth and characterization of indium-doped Cd1−xZnxTe crystal by traveling heater method

An indium-doped detector grade Cd0.9Zn0.1Te crystal was grown by the THM technique from Te-rich solution. The as-grown crystal showed the dark resistivity of (1–3)×1010 Ω cm. Through IR transmission microscopy Te inclusion with regular triangular or circular shapes could be observed, and the size of Te inclusion was around 7 μm and the concentration was ∼105 cm−3. The impurity concentrations were greatly reduced for the THM grown CZT, as compared to the Bridgman method grown CZT. A resolution of 8.5% was achieved under the 662 keV 137Cs gamma ray radiation at room temperature for the as-grown CZT samples.

► Detector grade Cd1−xZnxTe has been successfully grown by the THM technique.
► The as-grown CZT has a resistivity of ∼1010 Ω cm.
► Te inclusions' size and concentration were comparable to the commercial CZT.
► A resolution of 8.5% was achieved for the 137Cs 662 keVgamma line.