کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1823423 | 1526426 | 2013 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Punch-through protection of SSDs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The effectiveness of punch-through protection (PTP) structures on n-on-p AC-coupled silicon strip detectors using pulses from a 1064Â nm IR laser, which mimics beam accidents, is investigated. The voltages on the strip implants are measured as a function of the bias voltage and incoming particle flux. We present a 4-resistor model to describe the sensor after large particle fluxes, which is then used to characterize the effectiveness of PTP structures. The effectiveness of PTP structures is presented in terms of total strip implant to bias rail length, type of surface treatment used for strip isolation, coverage of the polysilicon bias resistor, and radiation damage from protons, neutrons and pions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 699, 21 January 2013, Pages 31-35
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 699, 21 January 2013, Pages 31-35
نویسندگان
H.F.-W. Sadrozinski, C. Betancourt, A. Bielecki, Z. Butko, V. Fadeyev, C. Parker, N. Ptak, J. Wright,