کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1823512 | 1526432 | 2012 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Description of the plasma delay effect in silicon detectors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Description of the plasma delay effect in silicon detectors Description of the plasma delay effect in silicon detectors](/preview/png/1823512.png)
چکیده انگلیسی
A new method of modeling of the current signal induced by charged particle in silicon detectors is presented. The approach is based on the Ramo-Shockley theorem for which the charge carrier velocities are determined by taking into account not only the external electric field generated by the electrodes but also the Coulomb interaction between the electron and hole clouds as well as their diffusion.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 693, 21 November 2012, Pages 170-178
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 693, 21 November 2012, Pages 170-178
نویسندگان
Z. Sosin,