Proposed triple-wall, voltage-isolating electrodes for multiple-bias-voltage 3D sensors

Dividing 3D active-edge silicon sensors into separate sections with a triple-wall sandwich of two trench electrodes separated by an insulating layer, will allow two or more bias voltages to be used simultaneously. Such sensors could be fabricated with only a single group of low-temperature additional steps and may be necessary to prevent a new form of radiation-damage failure in non-uniform radiation fields.