Simulation of the dielectric charging-up effect in a GEM detector

The charging up effect is well-known in detectors containing dielectric materials and it is due to electrons and ions liberated in an avalanche and collected on the dielectric surfaces. In particular in Gas Electron Multiplier (GEM) based detectors, charges can be captured by the Kapton that separates top and bottom electrodes. The collection of a substantial number of charges on the dielectric surfaces induces a modification of the field inside the GEM holes that implies important consequences on some fundamental parameters such as the electron transparency and the effective gain. The correct simulation of this effect opens new ways to the detailed study of the processes that happens in a GEM-based detector and gives the possibility to optimise the GEM geometry in order to avoid it. This paper compares results of the measurements and the simulations, with and without the introduction of the charging-up effect, of the GEM electron transparency in the case of a single GEM detector. The introduction of the charging up effect in the simulation resulted to be crucial in order to get the proper agreement with the measurements. The measurements and simulations of the GEM effective gain will be the subject of a future work.