کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1824129 | 1645432 | 2012 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Highly oriented polycrystalline α-HgI2 films grown through combined vertical deposition and HWPVD methods
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Different α-HgI2 seed layers were prepared by vertical deposition method through varying reactive solution concentrations. Polycrystalline α-HgI2 films were grown on the α-HgI2 seed layer by the hot wall vapor phase deposition (HWPVD) method. The orientation along the (001) direction and compactness of the polycrystalline α-HgI2 films are significantly enhanced as compared to that without a seed layer. The polycrystalline α-HgI2 films grown on a three-deposit seed layer show improved electrical properties.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 676, 1 June 2012, Pages 1-4
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 676, 1 June 2012, Pages 1-4
نویسندگان
Lei Ma, Weiguang Yang, Yali Wang, Gonglong Liu, Liangliang Chen, Ke Tang, Linjun Wang, Weimin Shi,