کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1824130 | 1645432 | 2012 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterisation of a thin fully depleted SOI pixel sensor with high momentum charged particles
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Characterisation of a thin fully depleted SOI pixel sensor with high momentum charged particles Characterisation of a thin fully depleted SOI pixel sensor with high momentum charged particles](/preview/png/1824130.png)
چکیده انگلیسی
This paper presents the results of the characterisation of a thin fully depleted pixel sensor manufactured in SOI technology on high-resistivity substrate with high momentum charged particles. The sensor is thinned to 70μm and a thin phosphor layer contact is implanted on the back-plane. Its response is compared to that of thick sensors of same design in terms of signal and noise, detection efficiency and single point resolution based on data collected with 300 GeV pions at the CERN SPS. We observe that the charge collected and the signal-to-noise ratio scale according to the estimated thickness of the sensitive volume and the efficiency and single point resolution of the thinned chip are comparable to those measured for the thick sensors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 676, 1 June 2012, Pages 50–53
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 676, 1 June 2012, Pages 50–53
نویسندگان
Marco Battaglia, Dario Bisello, Devis Contarato, Peter Denes, Piero Giubilato, Serena Mattiazzo, Devis Pantano,