Characterisation of a pixel sensor in 0.20μm SOI technology for charged particle tracking

This paper presents the results of the characterisation of a pixel sensor manufactured in 0.2μm SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation. The sensor is tested with short IR laser pulses, X-rays and 200 GeV pions. We report results on charge collection, particle detection efficiency and single point resolution.