Flux monitor diode radiation hardness testing

A flux monitor diode is being explored as an option for measurement of the output of an X-ray tube that is used for active transmission measurements on a pipe containing UF6 gas. The measured flux can be used to correct for any instabilities in the X-ray tube or the high voltage power supply. For this measurement, we are using a silicon junction p–n photodiode, model AXUV100GX, developed by International Radiation Detectors, Inc. (IRD, Inc.). This diode has a silicon thickness of 104 μ and a thin (3–7 nm) silicon dioxide junction passivating, protective entrance window. These diodes have been extensively tested for radiation hardness in the UV range. However, we intend to operate mainly in the 10–40 keV X-ray region. We are performing radiation hardness testing over this energy range, with the energy spectrum that would pass through the diode during normal operation. A long-term measurement was performed at a high flux, which simulated over 80 years of operation. No significant degradation was seen over this time. Fluctuations were found to be within the 0.1% operationally acceptable error range. After irradiation, an I–V characterization showed a temporary irradiation effect which decayed over time. This effect is small because we operate the diode without external bias.