کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1824641 | 1027342 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of extended defects in planar and pixelated CdZnTe detectors
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We evaluated a spectroscopy-grade 15×15×7 mm3 CdZnTe (CZT) crystal with a high μτ-product, >10−2 cm2/V, but impaired by microscopic extended defects, such as walls of dislocations, low-angle and sub-grain boundaries, and Te inclusions. First, we evaluated a planar detector fabricated from this crystal using a Micro-scale X-ray Detector Mapping (MXDM) technique. Then, we fabricated from the same crystal a pixel detector to study local non-uniformities of the electric field. The measured X-ray response maps confirmed the presence of non-uniformities in the charge transport, and they showed that the global- and local-distortions of the internal E-field correlated to the extended defects and space-charge buildup on the side surfaces.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 652, Issue 1, 1 October 2011, Pages 170–173
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 652, Issue 1, 1 October 2011, Pages 170–173
نویسندگان
G.S. Camarda, K.W. Andreini, A.E. Bolotnikov, Y. Cui, A. Hossain, R. Gul, K.-H. Kim, L. Marchini, L. Xu, G. Yang, J.E. Tkaczyk, R.B. James,