Characterisation of “n-in-p” pixel sensors for high radiation environments

This work presents the first held at Liverpool University measurements of pixel sensors with n-type readout implant in the p-type bulk before and after irradiation of samples by 24 GeV protons to doses 7×1015 and 1.5×1016 protons/cm2. A comparison is given for two measurement techniques; one based on the FE-I3 readout chip designed for the ATLAS and the other using the Beetle chip developed for the LHCb experiments at CERN.