کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1824739 | 1526462 | 2011 | 5 صفحه PDF | دانلود رایگان |
A new pixel module concept is presented, where thin sensors and a novel vertical integration technique are combined. This R&D activity is carried out in view of the ATLAS pixel detector upgrades. A first set of n-in-p pixel sensors with active thicknesses of 7575 and 150μm has been produced using a thinning technique developed at the Max-Planck-Institut Halbleiterlabor (HLL). Charge Collection Efficiency measurements have been performed, yielding a higher CCE than expected from the present radiation damage models. The interconnection of thin n-in-p pixels to the FE-I3 ATLAS electronics is under way, exploiting the Solid Liquid Interdiffusion (SLID) technique developed by the Fraunhofer Institut EMFT. In addition, preliminary studies aimed at Inter-Chip-Vias (ICV) etching into the FE-I3 electronics are reported. ICVs will be used to route the signals vertically through the read-out chip, to newly created pads on the backside. This should serve as a proof of principle for future four-side tileable pixel assemblies, avoiding the cantilever presently needed in the chip for the wire bonding.
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 650, Issue 1, 11 September 2011, Pages 145–149