Tests of monolithic pixel detectors in SOI technology with depleted substrate

This paper reviews the R&D program on monolithic pixel sensors in silicon-on-insulator technology carried out by LBNL, the University and INFN, Padova and SCIPP-UCSC. The main issues addressed by the R&D, back-gating and radiation tolerance, are discussed together with the preliminary results from the characterization of the latest chip in this technology.