Design study for a next generation B factory pixel vertex detector

We present a conceptual design for a low-mass, all-pixel vertex detector using the CMOS quadruple well INMAPS process, capable of working in the very high luminosities exceeding 1036 cm−2 s−1 that can be expected at the next generation e+e−B Factories. We concentrate on the vertexing requirements necessary for time-dependent measurements that are also relevant to searches for new physics beyond the Standard Model. We investigate different configurations and compare with the existing baseline designs for the SuperB and BaBar experiments.