کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1825181 | 1027357 | 2011 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Development of SOI pixel process technology
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
A silicon-on-insulator (SOI) process for pixelated radiation detectors is developed. It is based on a 0.2 μm CMOS fully depleted (FD-)SOI technology. The SOI wafer is composed of a thick, high-resistivity substrate for the sensing part and a thin Si layer for CMOS circuits. Two types of pixel detectors, one integration-type and the other counting-type, are developed and tested. We confirmed good sensitivity for light, charged particles and X-rays for these detectors.For further improvement on the performance of the pixel detector, we have introduced a new process technique called buried p-well (BPW) to suppress back gate effect. We are also developing vertical (3D) integration technology to achieve much higher density.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 636, Issue 1, Supplement, 21 April 2011, Pages S31–S36
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 636, Issue 1, Supplement, 21 April 2011, Pages S31–S36
نویسندگان
Y. Arai, T. Miyoshi, Y. Unno, T. Tsuboyama, S. Terada, Y. Ikegami, R. Ichimiya, T. Kohriki, K. Tauchi, Y. Ikemoto, Y. Fujita, T. Uchida, K. Hara, H. Miyake, M. Kochiyama, T. Sega, K. Hanagaki, M. Hirose, J. Uchida, Y. Onuki, Y. Horii, H. Yamamoto,