کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1825190 1027357 2011 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم ابزار دقیق
پیش نمایش صفحه اول مقاله
Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments
چکیده انگلیسی
We are developing n+-in-p, p-bulk and n-readout, microstrip sensors, fabricated by Hamamatsu Photonics, as a non-inverting radiation hard silicon detector for the ATLAS tracker upgrade at the super-LHC (sLHC) proposed facility. The bulk radiation damage after neutron and proton irradiations is characterized with the leakage current, charge collection and full depletion voltage. The detectors should provide acceptable signal, signal-to-noise ratio exceeding 15, after the integrated luminosity of 6000 fb−1, which is twice the sLHC integrated luminosity goal.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 636, Issue 1, Supplement, 21 April 2011, Pages S83-S89
نویسندگان
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