کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1825217 | 1027357 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Performance study of SOI monolithic pixel detectors for X-ray application
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
We are now developing Silicon-on-insulator (SOI) monolithic pixel detectors for X-ray and charged particle applications in collaboration with OKI Semiconductor Co., Ltd. The detector development project started in 2005 and the SOI process for pixel detectors was developed. We developed some prototypes of SOI pixel detectors. Specifically, integration type and counting type pixel detectors were irradiated with a continuous red laser, infrared laser and X-rays and their performances were studied. One of the issues in the SOI detectors is the back-gate effect, that is, higher back bias voltages affect the characteristics of SOI-CMOS transistors. As a result of the new process step to protect the device against the back-gate effect, images with higher back bias voltages were obtained in the integration-type pixel detector. We also confirmed the dependence on 8Â keV X-ray intensity for the counting type pixel detector. In 2009, new versions of the detectors were designed to improve their performances with X-rays and charged particles.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 636, Issue 1, Supplement, 21 April 2011, Pages S237-S241
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 636, Issue 1, Supplement, 21 April 2011, Pages S237-S241
نویسندگان
T. Miyoshi, Y. Arai, M. Hirose, R. Ichimiya, Y. Ikemoto, T. Kohriki, T. Tsuboyama, Y. Unno,