کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1825545 | 1027365 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Beam test results for the RAPS03 non-epitaxial CMOS active pixel sensor
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Recently our group has been investigating the possibility of using a standard CMOS technology - featuring no epitaxial layer - to fabricate a sensor for charged particle detection. In this work we present the results obtained exposing sensors with 256Ã256 pixels (10Ã10μm pixel size, two different pixel layouts) to 180 GeV protons and positrons at the SuperProtoSynchrotron facility (CERN). We have investigated the different response of the two architectural options in terms of S/N, cluster width, intrinsic spatial resolution, efficiency. The results show a good Landau response, S/N about 22 with an average cluster size of 4.5 pixels, and an intrinsic spatial resolution of 1.5μm (order of 1/7th of the pixel size).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 628, Issue 1, 1 February 2011, Pages 230-233
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 628, Issue 1, 1 February 2011, Pages 230-233
نویسندگان
Daniele Biagetti, Alessandro Marras, Stefano Meroli, Daniele Passeri, Pisana Placidi, Leonello Servoli, Paola Tucceri,