کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1826547 | 1027385 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical analysis of carbon nanostructures/silicon heterojunctions designed for radiation detection
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A new class of radiation detectors based on carbon nanostructures as the active photosensitive element has been recently developed. In this scenario the optimization of the device, both in dark and on light irradiation, is a crucial point. Here, we report on electrical measurements performed in dark conditions on carbon nanofibers and nanotubes deposited on silicon substrates. Our experimental results were interpreted in terms of a multistep tunneling process occurring at the carbon nanostructures/silicon interface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 629, Issue 1, 11 February 2011, Pages 377–381
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 629, Issue 1, 11 February 2011, Pages 377–381
نویسندگان
A. Tinti, F. Righetti, T. Ligonzo, A. Valentini, E. Nappi, A. Ambrosio, M. Ambrosio, C. Aramo, P. Maddalena, P. Castrucci, M. Scarselli, M. De Crescenzi, E. Fiandrini, V. Grossi, S. Santucci, M. Passacantando,