کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1826827 | 1526475 | 2009 | 7 صفحه PDF | دانلود رایگان |

A large set of silicon pad detectors produced on MCz and FZ wafer of p- and n-type was irradiated in two steps, first by fast charged hadrons followed by reactor neutrons. In this way the irradiations resemble the real irradiation fields at LHC. After irradiations controlled annealing started in steps during which the evolution of full depletion voltage, leakage current and charge collection efficiency was monitored. The damage introduced by different irradiation particles was found to be additive. The most striking consequence of that is a decrease of the full depletion voltage for n-type MCz detectors after additional neutron irradiation. This confirms that effective donors introduced by charged hadron irradiation are compensated by acceptors from neutron irradiation.
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 609, Issues 2–3, 11 October 2009, Pages 142–148