کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1827102 | 1027404 | 2010 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Radiation hardness of p-type silicon detectors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Finely segmented silicon detectors made with n-side readout on p-type substrate have emerged as the most promising choice for the replacement of the tracker systems for the CERN LHC upgrade to higher luminosity. They have practically assumed the status of baseline devices for the silicon microstrip layers of the upgrades, and are now also being considered as possible candidates even for the innermost pixel layers. A review of the reasons for the success of the p-type bulk devices is presented here.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 612, Issue 3, 11 January 2010, Pages 464–469
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 612, Issue 3, 11 January 2010, Pages 464–469
نویسندگان
Gianluigi Casse,