Review of solid state photomultiplier developments by CPTA and photonique SA

We report on recently developed solid state photomultipliers (SSPMs) based on the Metal Resistive Silicon Geiger-mode Avalanche Photodiode architecture (MRS-APD). SSPMs implementing a n+ p p+ doping structure now reach up to 50% peak photon detection efficiency in the green and red parts of the visible spectrum. They operate at high gain (>3×105) and have exceptionally low temperature coefficient (<1.0%/°C). Optical cross-talk between SSPM micro-cells is significantly reduced through the use of optical trenches. Building on this technology, single die photon detectors with 1.0, 4.4 and 9.0 mm2 sensitive areas have been manufactured. Special surface treatment techniques allow for an increase of UV and blue light sensitivity for these green–red sensitive devices. We also report on SSPMs employing a p+ p n+ doping structure which exhibit high sensitivity for blue and UV light with photon detection efficiency reaching up to 30% at 420 nm.