Characterization of ZnSe(Te) scintillators by frequency domain luminescence lifetime measurements

Dynamics of photoluminescence (PL) decay in Te-doped ZnSe scintillator crystal is studied using frequency domain luminescence lifetime measurement technique, which enables simultaneous characterization of components in multicomponent PL decay in a wide time window ranging from millisecond to nanosecond domain. Evolution of decay times and relative contributions of the decay components corresponding to different PL decay mechanisms was revealed as a function of temperature.