Development of thick-foil and fine-pitch GEMs with a laser etching technique

We have produced thick-foil and fine-pitch gas electron multipliers (GEMs) using a laser etching technique. To improve production yield we have employed a new material, liquid crystal polymer, instead of polyimide as an insulator layer. The effective gain of the thick-foil GEM with a hole pitch of 140μm, a hole diameter of 70μm, and a thickness of 100μm reached a value of 104104 at an applied voltage of 720 V. The measured effective gain of the thick-foil and fine-pitch GEM (80μm pitch, 40μm diameter, and 100μm thick) was similar to that of the thick-foil GEM. The gain stability was measured for the thick-foil and fine-pitch GEM, showing no significant increase or decrease as a function of elapsed time from applying the high voltage. The gain stability over 3 h of operation was about 0.5%. Gain mapping across the GEM showed a good uniformity with a standard deviation of about 4%. The distribution of hole diameters across the GEM was homogeneous with a standard deviation of about 3%. There was no clear correlation between the gain and hole diameter maps.