TCT and test beam results of irradiated magnetic Czochralski silicon (MCz-Si) detectors

Pad and strip detectors processed on high resistivity n-type magnetic Czochralski silicon (MCz-Si) were irradiated to several different fluences with protons. The pad detectors were characterized with the transient current technique (TCT) and the full-size strip detectors with a reference beam telescope and a 225 GeV muon beam. The TCT measurements indicate a double junction structure and space charge sign inversion in MCz-Si detectors after 6×10146×1014 1 MeV neq/cm2neq/cm2 fluence. In the beam test a signal-to-noise (S/N) ratio of 50 was measured for a non-irradiated MCz-Si sensor, and a S/N   ratio of 20 for the sensors irradiated to the fluences of 1×10141×1014 1 and 5×10145×1014 1 MeV neq/cm2neq/cm2.