Measurement of efffective atomic numbers of holmium doped and undoped layered semiconductors via transmission method around the absorption edge

Effective atomic numbers were measured for InSe and InSe having different Holmium concentrations measured in the energy region 15.746–40.930 keV using a Si(Li) detector. InSe:Holmium(0.0025), InSe:Holmium(0.0050), InSe:Holmium(0.025) InSe:Holmium(0.05) and InSe crystals have been grown by the Bridgman–Stocbarger method. The measured values were compared with the theoretical ones obtained using WinXCom being a Windows version of XCOM on the basis of mixture rule. The objective of this work is to show that there is a relation between effective atomic numbers and doped Ho fractions to InSe.